SweGaN AB of Linköping, Sweden, which manufactures custom gallium nitride on silicon carbide (GaN-on-SiC) epitaxial wafers (based on a unique growth technology) for RF and power electronics devices, has announced a new benchmark for GaN high-frequency devices based on its QuanFINE material, reckoning that the demonstration promises commercial benefits for the entire GaN RF value chains including telecom, space, and military markets. SweGaN’s buffer-free GaN-on-SiC HEMT epi demonstrates competitive microwave performance and device efficiency
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